naina s emiconductor l td . 11 0 mds 1 d - 95 , sector 63, noida C ? 4205450 ? fax 0120 ? three C phase bridge rectifier features easy connections excellent power volume ratio insulated type mds voltage ratings (t j = 25 0 c unless otherwise noted) type number voltage code vrrm, max. repetitive peak reverse voltage (v) vrsm, max. non - repetitive peak reverse voltage (v) irrm max @ tj max (ma) 11 0 mds 80 800 900 10 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 thermal and mechanical specifications (ta = 250c unless otherwise noted) parameters symbol values units maximum operating junction temperature range t j - 40 to + 150 0 c maximum storage temperature range t stg - 40 to + 150 0 c maximum thermal resistance, junction to case dc operation per module r th(jc) 0. 18 0 c/w dc operation per junction 1. 07 120 rect conduction angle per module 0. 2 1 120 rect conduction angle per junction 1. 25 maximum thermal resistance, case to heatsink per module, mounting surface smooth, flat and greased r th(cs) 0.03 0 c/w mounting torque 10% to heatsink t 4 to 6 nm to terminal 3 to 4 approximate weight 176 g
naina s emiconductor l td . 11 0 mds 2 d - 95 , sector 63, noida C ? 4205450 ? fax 0120 ? electrical specifications (t j = 25 0 c unless otherwise noted) parameters conditions symbol values units maximum dc output current 120 0 rect conduction angle , t c = 85 0 c i 0 110 a maximum peak one - cycle forward, non - repetitive surge current t = 10ms no voltage reapplied t j = t j max. i fsm 950 a t = 8.3ms 1000 t = 8.3ms 100% v rrm reapplied 800 t = 10ms 840 maximum i 2 t for fusing t = 8.3ms no voltage reapplied i 2 t 4500 a 2 s t = 10ms 4100 t = 8.3ms 100% v rrm reapplied 3200 t = 10ms 2900 maximum j 2 t for fusing t = 0.1 to 10ms, no voltage reapplied j 2 t 45000 a 2 s low level value of threshold voltage [ 167% * * i f(av) i * i f(av) ], @ t j max v f(to)1 0.81 v high level value of threshold voltage [ i i f(av) ], @ t j max v f(to)2 0.99 v low level value of forward slope resistance [ 167% * * i f(av) i * i f(av) ], @ t j max r 1 4.37 m? high level value of forward slope resistance [ i * i f(av) ], @ t j max r 2 4.64 m? maximum forward voltage drop i pk = 100a, t p = 400 s single junction v fm 1. 4 v rms isolation voltage f = 50hz, t = 1ms, all terminals shorted v iso 4000 v diode configuration
naina s emiconductor l td . 11 0 mds 3 d - 95 , sector 63, noida C ? 4205450 ? fax 0120 ? all dimensions in mm
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